| PART |
Description |
Maker |
| BAS85 |
Low forward voltage High breakdown voltage Guard ring protected
|
TY Semiconductor Co., Ltd
|
| BAT54AW BAT54SW BAT54CW |
Low forward voltage Guard ring protected Very small SMD package.
|
TY Semiconductor Co., Ltd
|
| 1PS76SB40 |
Low forward volatge Guard ring protected Very small plastic SMD package
|
TY Semiconductor Co., L...
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MBR20H100CT MBR20H200CT |
20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection
|
Taiwan Semiconductor Co...
|
| BAT54AW BAT54SW BAT54CW |
Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323
|
NXP Semiconductors
|
| 20KDA10 |
Miniature Size, Low Forward Voltage drop
Low Forward Voltage drop Diode
Miniature Size / Low Forward Voltage drop
|
NIEC[Nihon Inter Electronics Corporation]
|
| 1KSMBJ11A 1KSMBJ9.1A 1KSMBJ51A 1KSMBJ91A 1KSMBJ24A |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:600V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41
Silicon Avalanche Diodes - 1000W Surface Mount Transient Voltage Suppressor 硅雪崩二极管- 1000瓦表面贴装瞬态电压抑制器
|
Littelfuse, Inc.
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 444CNQ040 |
SCHOTTKY RECTIFIER
Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectroni...
|
| APT30GT60BRG APT30GT60BR08 |
Low Forward Voltage Drop
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
Microsemi Corporation
Advanced Power Technology
|
